j. ls e11eu 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor BDY73 description ? excellent safe operating area ? dc current gain-hfe=50-150@lc = 4a ? collector-emitter saturation voltage- : vce(sa.)= 11 v(max)@ lc = 4a applications ? designed for general-purpose switching and amplifier applications absolute maximum ratings(ta=25c) symbol vcbo voer vceo vebo lc ib pc tj tstg parameter collector-base voltage collector-emitter voltage collector-emitter voltage emitter-base voltage collector current-continuous base current collector power dissipation@tg=25c junction temperature storage temperature value 100 70 60 7 15 7 117 200 -65-200 unit v v v v a a w 'c r thermal characteristics symbol rth j-c parameter max thermal resistance, junction to case 1 .5 unit "c/w 2 pin 1.base 2. emitter 3.cqllector(case) to-3 package i a 1 1 i -*iu-d; *~~r-? ^ ^\'-^r f (t ^1 \^ ? t c tpl r / \ c \n dim mm max a 39x? b 2530 c r.ao d 090 e 1.40 26 &t 8.30 1.10 1.60 silicon npn power transistors BDY73 electrical characteristics tc=25'c unless otherwise specified symbol vceo(sus) vcer(sus) vcex(sus) vce(sat) vse(on) iceo icex iebo hpe is/b fr parameter collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter sustaining voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current collector cutoff current emitter cutoff current dc current gain second breakdown collector current with base forward biased current gain-bandwidth product conditions lc= 200ma; 1b= 0 lc= 200ma; rbe=100fi lc=100ma;vbe=-1.5v lc= 4a; ib= 0.4a lc= 4a; vce= 4v vce= 30v; ib=0 vce=100v;vbe(t,ff)=1.5v vce= 100v; vb6(cff)= 1.5v,tc=150c veb= 7.0v; lc=0 lc= 4a; vce= 4v vce= 60v, t= 1.0s, nonrepetitive lc=1a;vce=4v min 60 70 90 50 1.95 0.8 max 1.1 1.8 0.7 1.0 5.0 5.0 150 unit v v v v v ma ma ma a mhz
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